INORGANIC POLARIZER, MANUFACTURING METHOD FOR THE SAME AND OPTICAL EQUIPMENT
PROBLEM TO BE SOLVED: To provide: an inorganic polarizer which facilitates manufacturing thereof and has excellent optical characteristics; a manufacturing method of the inorganic polarizer; and optical equipment mounted therewith.SOLUTION: An inorganic polarizer with a wire grid structure comprises...
Saved in:
Main Authors | , , , , , , , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
16.08.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To provide: an inorganic polarizer which facilitates manufacturing thereof and has excellent optical characteristics; a manufacturing method of the inorganic polarizer; and optical equipment mounted therewith.SOLUTION: An inorganic polarizer with a wire grid structure comprises: a transparent substrate; and grid-like convex sections arranged on the transparent substrate with intervals shorter than a wavelength of light in a band of use. Each grid-like convex section has, in order from a side of the transparent substrate, a reflection layer and a reflection suppression layer which contains a dielectric material and non-dielectric material with a content rate of the non-dielectric material increased as an offset distance from the reflection layer is increased. The non-dielectric material in the reflection suppression layer is at least one type of an element (except a Si element) selected from a group consisting of Fe, Ta, Si, Ti, Mg, W, Mo and Al or an alloy. An edge section of the reflection suppression layer opposite to the reflection layer has the content rate of the non-dielectric material of 45 atm% to 98 atm%.SELECTED DRAWING: Figure 1
【課題】生産性及び光学特性に優れる無機偏光板及びその製造方法、並びにその無機偏光板を備える光学機器を提供する。【解決手段】無機偏光板は、ワイヤグリッド構造を有する無機偏光板であって、透明基板と、使用帯域の光の波長よりも短いピッチで前記透明基板上に配列された格子状凸部と、を備え、前記格子状凸部が、前記透明基板側から順に、反射層と、誘電材料及び非誘電材料を含み且つ非誘電材料の含有率が前記反射層から離隔するに従って増加する反射抑制層と、を有し、前記反射抑制層に含まれる非誘電材料が、Fe、Ta、Si、Ti、Mg、W、Mo、及びAlからなる群より選択される少なくとも1種の元素の単体(ただし、Si単体を除く)又は合金であり、前記反射抑制層の前記反射層とは反対側の端部における非誘電材料の含有率が45atm%〜98atm%である。【選択図】図1 |
---|---|
Bibliography: | Application Number: JP20170233925 |