SEMICONDUCTOR DEVICE

• Main Authors: KAWASHIRI SATOSHI, MATSUDA SHIGENOBU, OGAWA KAZUKO
• Format: Patent
• Language: English; Japanese
• Published: 09.08.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device having a switching element capable of improving short-circuit resistance while inhibiting increase in on-resistance.SOLUTION: A semiconductor device comprises: a first conductivity type first semiconductor region; a second conductivity type second semiconductor region arranged on the first semiconductor region; a groove piercing the second semiconductor region to reach the first semiconductor region; a first conductivity type third semiconductor region which includes a first part provided along a depth direction of the groove and a second part extending in lateral direction in contact with an upper part of the first part in which the first part and the second part are arranged on the second semiconductor region; and a control electrode arranged inside the groove via an insulation film, in which an upper part of the first part has a width narrower than a width of a lower part of the first part.SELECTED DRAWING: Figure 1 【課題】オン抵抗の増加を抑制しつつ、短絡耐量を向上することができるスイッチング素子を有する半導体装置を提供する。【解決手段】第１導電型の第１半導体領域と、第１半導体領域の上に配置された第２導電型の第２半導体領域と、第２半導体領域を貫通して第１半導体領域に達する溝と、溝の深さ方向に沿って設けられた第１の部分と、第１の部分の上部に接して横方向に延びる第２の部分とを備え、第１の部分と第２の部分が第２半導体領域の上に配置された第１導電型の第３半導体領域と、溝の内側に絶縁膜を介して配置された制御電極とを備え、第１の部分の上部の幅が第１の部分の下部の幅よりも狭くなっている。【選択図】図１