SILICON CARBIDE POWDERS

• Main Authors: ISHIDA HIRONORI, MASUDA KENTA, NONAKA KIYOSHI
• Format: Patent
• Language: English; Japanese
• Published: 02.08.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide silicon carbide powders with a higher sublimation rate by the silicon carbide powders having a controlled shape for use as a raw material in sublimation recrystallization.SOLUTION: Provided are silicon carbide powders to be used as a raw material for producing a single crystal of silicon carbide by sublimation recrystallization. The silicon carbide powders comprise 4 to 26% of plate-shaped powders that have a longer axial diameter/shorter axial diameter ratio of 5 or less and a shorter axial diameter/thickness ratio of 2 or greater. The silicon carbide powders have a particle size range represented by d to d×α (μm) that fulfills α≤6.SELECTED DRAWING: Figure 1 【課題】炭化珪素粉末の形状を調整することにより、昇華再結晶法の原料として用いた場合に、昇華速度がより大きい炭化珪素粉末を提供する。【解決手段】この炭化珪素粉末は、昇華再結晶法により炭化珪素の単結晶を製造する際の原料として用いられる炭化珪素粉末であって、長軸径／短軸径の比が５以下であり、短軸径／厚さの比が２以上である板状粉末を４〜２６％含有し、前記炭化珪素粉末の粒度範囲をｄ〜ｄ×α（μｍ）としたとき、α≦６である。【選択図】図１