OPTICAL SENSOR

PROBLEM TO BE SOLVED: To provide an optical sensor having a novel configuration.SOLUTION: The optical sensor of the present disclosure includes: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer...

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Bibliographic Details
Main Authors TAMAOKI NORIHIKO, TOKUHARA TAKETOMI
Format Patent
LanguageEnglish
Japanese
Published 19.07.2018
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Summary:PROBLEM TO BE SOLVED: To provide an optical sensor having a novel configuration.SOLUTION: The optical sensor of the present disclosure includes: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit for supplying a voltage to at least one of the first electrode and the second electrode so as to generate an electric field in a direction from the second electrode to the first electrode in the photoelectric conversion layer; and a detection circuit for detecting a signal corresponding to the magnitude of a capacitance value between the first electrode and the second electrode, which changes by incidence of light on the photoelectric conversion layer. The first charge blocking layer is configured to suppress movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer. The second charge blocking layer is configured to suppress movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.SELECTED DRAWING: Figure 3 【課題】新規な構成を有する光センサを提供する。【解決手段】本開示の光センサは、第1電極と、第2電極と、第1電極および第2電極の間の光電変換層と、第1電極および光電変換層の間の第1電荷ブロッキング層と、第2電極および光電変換層の間の第2電荷ブロッキング層と、第2電極から第1電極に向かう方向の電場を光電変換層内に発生させるように、第1電極および第2電極の少なくとも一方に電圧を印加する電圧供給回路と、光電変換層に光が入射することによって変化する、第1電極と第2電極との間の容量値の大きさに対応する信号を検出する検出回路とを備え、第1電荷ブロッキング層は、光電変換層から第1電極への正孔の移動と、第1電極から光電変換層への電子の移動とを抑制し、第2電荷ブロッキング層は、光電変換層から第2電極への電子の移動と、第2電極から光電変換層への正孔の移動とを抑制するように構成されている。【選択図】図3
Bibliography:Application Number: JP20180084205