MATERIAL FOR PHOTOELECTRIC CONVERSION ELEMENT FOR IMAGING DEVICE AND PHOTOELECTRIC CONVERSION ELEMENT INCLUDING THE SAME

• Main Authors: NIIMI KAZUKI, YAKUSHIJI HIDENORI, TONE YUSUKE
• Format: Patent
• Language: English; Japanese
• Published: 19.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a photoelectric conversion element excellent in hole or electron leak preventing characteristics, hole or electron transporting characteristics, heat resistance against process temperature, visible light transparency, etc. and a material for the photoelectric conversion element for an imaging device which can be used for various electronic devices including organic transistors and the like having excellent mobility and heat resistance.SOLUTION: The material for a photoelectric conversion element for an imaging device includes a compound represented by the following formula (1) (in the formula (1), Rand Reach represent a substituted or unsubstituted heterocyclic condensed aromatic group, and Rand Reach represent a substituent).SELECTED DRAWING: Figure 1 【課題】正孔もしくは電子リーク防止特性、正孔もしくは電子輸送特性、プロセス温度に対する耐熱性、可視光透明性等に優れた、光電変換素子や、移動度や耐熱性に優れた有機トランジスタ等をはじめとする種々のエレクトロニクスデバイスに用い得る撮像素子用光電変換素子用材料を提供する。【解決手段】下記式（１）（式（１）中、Ｒ１及びＲ２は置換又は無置換のヘテロ環縮合芳香族基を表し、Ｒ３及びＲ４は置換基を表す。）で表される化合物を含む撮像素子用光電変換素子用材料。【選択図】図１