SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: OKUTANI MANABU, YOSHIHARA NAOHIKO, ABE HIROSHI
• Format: Patent
• Language: English; Japanese
• Published: 19.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a substrate processing method and a substrate processing apparatus capable of satisfactorily eliminating a liquid film from an upper part of a substrate in a configuration in which a vapor layer of a process liquid is formed between a liquid film of the process liquid and an upper surface of the substrate.SOLUTION: By supplying IPA (process liquid) to an upper surface 33 of a substrate W, a liquid film 40 of the IPA is formed on the substrate W. In a state where an interior space of a sealed chamber is hermetically sealed, by supplying gas to the interior space, the interior space is pressurized until a pressure in the interior space reaches a first pressure higher than the atmospheric pressure. The substrate W is heated so that a vapor layer 41 of the IPA is formed between the liquid film 40 and the substrate W in a state in which the pressure in the interior space has reached the first pressure. In a state in which the vapor layer 41 of the IPA is formed between the liquid film 40 and the substrate W, by reducing pressure of the interior space until the pressure in the interior space becomes a second pressure which is lower than the first pressure, the liquid film 40 is removed from the upper part of the substrate W by evaporating the IPA.SELECTED DRAWING: Figure 8B 【課題】処理液の液膜と基板の上面との間に処理液の蒸気層が形成される構成において、基板上から液膜を良好に排除することができる基板処理方法および基板処理装置を提供する。【解決手段】ＩＰＡ（処理液）を基板Ｗの上面３３に供給することによって、ＩＰＡの液膜４０が基板Ｗ上に形成される。密閉チャンバの内部空間が密閉された状態で、内部空間に気体が供給されることによって、内部空間の圧力が大気圧よりも高い第１圧力になるまで内部空間が加圧される。内部空間の圧力が第１圧力になった状態で液膜４０と基板Ｗとの間にＩＰＡの蒸気層４１が形成されるように、基板Ｗが加熱される。液膜４０と基板Ｗとの間にＩＰＡの蒸気層４１が形成された状態で、内部空間の圧力が第１圧力よりも小さい第２圧力になるまで内部空間を減圧することによって、ＩＰＡを蒸発させて基板Ｗ上から液膜４０が排除される。【選択図】図８Ｂ