PROJECTION EXPOSURE METHOD AND PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY

• Main Authors: GRAESCHUS VOLKER, TORALF GRUNER
• Format: Patent
• Language: English; Japanese
• Published: 19.07.2018
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

PROBLEM TO BE SOLVED: To provide a projection exposure method capable of improved near-instantaneous fine optimization of the imaging properties.SOLUTION: A projection exposure method includes the steps of: holding a mask M between an illumination system and a projection lens of a projection exposure apparatus so that a pattern is arranged in the region of the object plane of the projection lens; holding a substrate so that a radiation-sensitive surface of the substrate is arranged in a region of an image plane of the projection lens, the image plane being optically conjugated with respect to the object plane; illuminating an illumination region of the mask with an illumination radiation ILR provided by the illumination system; and projecting a part of the pattern lying in the illumination region onto an image field at the substrate with the aid of the projection lens, wherein all rays of the projection radiation which contribute to image generation in the image field form a light quiver LK in the projection lens. The method includes the steps of: determining at least one light quiver parameter which describes a property of the light quiver; and controlling operation of the projection exposure apparatus by taking account of the light quiver parameter.SELECTED DRAWING: Figure 2 【課題】改善されたほぼ瞬時の緻密な結像特性の最適化が可能である投影露光方法を提供する。【解決手段】投影露光方法は、投影露光装置の照明系と投影レンズの間にパターンが投影レンズの物体平面の領域に配置されるようにマスクＭを保持する段階、基板を基板の感放射線面が物体平面に対して光学的に共役である投影レンズの像平面の領域に配置されるように保持する段階、マスクの照明領域を照明系によって供給される照明放射線ＩＬＲで照明する段階、投影レンズを用いて照明領域内に位置するパターンの一部を基板での像視野上に投影する段階を含み、像視野内の像発生に寄与する投影放射線の全ての光線は、投影レンズ内に光クイバーＬＫを形成する。方法は、光クイバーの特性を表す少なくとも１つの光クイバーパラメータを決定する段階、光クイバーパラメータを考慮して投影露光装置の動作を制御する段階を有する。【選択図】図２