SEMICONDUCTOR DEVICE

• Main Authors: NAKAMURA HIROKI, MASUOKA FUJIO
• Format: Patent
• Language: English; Japanese
• Published: 12.07.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device with the reduced number of selection gates per one columnar semiconductor layer.SOLUTION: A semiconductor device comprises: a first columnar semiconductor layer; a first selection gate insulating film surrounding the first columnar semiconductor layer; a first selection gate surrounding the first selection gate insulating film; a first gate insulating film surrounding an upper part of the first columnar semiconductor layer; a first contact electrode surrounding the first gate insulating film; a first bit line connected to the upper part of the first columnar semiconductor layer and an upper part of the first contact electrode; a second columnar semiconductor layer; a layer having a first charge storage layer surrounding the second columnar semiconductor layer; a first control gate surrounding the layer; a layer having a second charge storage layer surrounding the second columnar semiconductor layer; a second control gate surrounding the layer; a second gate insulating film surrounding an upper part of the second columnar semiconductor layer; a second contact electrode surrounding the second gate insulating film; and first lower internal wiring connecting a lower part of the first columnar semiconductor layer to a lower part of the second columnar semiconductor layer.SELECTED DRAWING: Figure 1 【課題】柱状半導体層一本あたりの選択ゲート数を減少させた半導体装置の構造を提供する。【解決手段】本発明の半導体装置は、第１の柱状半導体層と、これを取り囲む第１の選択ゲート絶縁膜と、これを取り囲む第１の選択ゲートと、第１の柱状半導体層上部を取り囲む第１のゲート絶縁膜と、第１のゲート絶縁膜を取り囲む第１のコンタクト電極と、第１の柱状半導体層上部と第１のコンタクト電極上部に接続された第１のビット線と、第２の柱状半導体層と、これを取り囲む第１の電荷蓄積層を有する層と、これを取り囲む第１の制御ゲートと、第２の柱状半導体層を取り囲む第２の電荷蓄積層を有する層と、これを取り囲む第２の制御ゲートと、第２の柱状半導体層上部を取り囲む第２のゲート絶縁膜と、第２のゲート絶縁膜を取り囲む第２のコンタクト電極と、第１の柱状半導体層の下部と第２の柱状半導体層の下部を接続する第１の下部内部配線、を有する。【選択図】図１