METHOD FOR MANUFACTURING SYNTHETIC DIAMOND

• Main Authors: HORIUCHI HIROSHI, UMEZAKI YOSUKE
• Format: Patent
• Language: English; Japanese
• Published: 05.07.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for increasing the growth rate of a diamond when obtaining a synthetic diamond using a CVD method.SOLUTION: In the method for manufacturing a synthetic diamond, capable of manufacturing the synthetic diamond by a chemical vapor phase deposition method using a H source gas, a C source gas and a N source gas as a raw material gas, a NFgas is used as the N source gas. The raw material gas preferably includes the H source gas of 50-99.99 vol% to the total amount of the raw material gas, the C source gas of 0.01-50 vol% to the H source gas and a NFgas of 0.001-1 vol% to the C source gas.SELECTED DRAWING: Figure 1 【課題】本発明は、ＣＶＤ法を用いて合成ダイヤモンドを得る際に、ダイヤモンドの成長速度を速める手法を得ることを目的とした。【解決手段】原料ガスとして、Ｈ源ガス、Ｃ源ガス、及びＮ源ガスを用いて、化学気相成長法によって合成ダイヤモンドを製造する合成ダイヤモンドの製造方法において、該Ｎ源ガスとして、ＮＦ３ガスを用いることを特徴とする合成ダイヤモンドの製造方法であり、好ましくは、前記原料ガスが、原料ガスの全量に対してＨ源ガスを５０〜９９．９９ｖｏｌ％、Ｈ源ガスに対して、Ｃ源ガスを０．０１〜５０ｖｏｌ％、及び該Ｃ源ガスに対して、ＮＦ３ガスを０．００１〜１ｖｏｌ％、含有することを特徴とする。【選択図】図１