METHOD FOR MANUFACTURING SYNTHETIC DIAMOND
PROBLEM TO BE SOLVED: To provide a method for increasing the growth rate of a diamond when obtaining a synthetic diamond using a CVD method.SOLUTION: In the method for manufacturing a synthetic diamond, capable of manufacturing the synthetic diamond by a chemical vapor phase deposition method using...
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05.07.2018
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Abstract | PROBLEM TO BE SOLVED: To provide a method for increasing the growth rate of a diamond when obtaining a synthetic diamond using a CVD method.SOLUTION: In the method for manufacturing a synthetic diamond, capable of manufacturing the synthetic diamond by a chemical vapor phase deposition method using a H source gas, a C source gas and a N source gas as a raw material gas, a NFgas is used as the N source gas. The raw material gas preferably includes the H source gas of 50-99.99 vol% to the total amount of the raw material gas, the C source gas of 0.01-50 vol% to the H source gas and a NFgas of 0.001-1 vol% to the C source gas.SELECTED DRAWING: Figure 1
【課題】本発明は、CVD法を用いて合成ダイヤモンドを得る際に、ダイヤモンドの成長速度を速める手法を得ることを目的とした。【解決手段】原料ガスとして、H源ガス、C源ガス、及びN源ガスを用いて、化学気相成長法によって合成ダイヤモンドを製造する合成ダイヤモンドの製造方法において、該N源ガスとして、NF3ガスを用いることを特徴とする合成ダイヤモンドの製造方法であり、好ましくは、前記原料ガスが、原料ガスの全量に対してH源ガスを50〜99.99vol%、H源ガスに対して、C源ガスを0.01〜50vol%、及び該C源ガスに対して、NF3ガスを0.001〜1vol%、含有することを特徴とする。【選択図】図1 |
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AbstractList | PROBLEM TO BE SOLVED: To provide a method for increasing the growth rate of a diamond when obtaining a synthetic diamond using a CVD method.SOLUTION: In the method for manufacturing a synthetic diamond, capable of manufacturing the synthetic diamond by a chemical vapor phase deposition method using a H source gas, a C source gas and a N source gas as a raw material gas, a NFgas is used as the N source gas. The raw material gas preferably includes the H source gas of 50-99.99 vol% to the total amount of the raw material gas, the C source gas of 0.01-50 vol% to the H source gas and a NFgas of 0.001-1 vol% to the C source gas.SELECTED DRAWING: Figure 1
【課題】本発明は、CVD法を用いて合成ダイヤモンドを得る際に、ダイヤモンドの成長速度を速める手法を得ることを目的とした。【解決手段】原料ガスとして、H源ガス、C源ガス、及びN源ガスを用いて、化学気相成長法によって合成ダイヤモンドを製造する合成ダイヤモンドの製造方法において、該N源ガスとして、NF3ガスを用いることを特徴とする合成ダイヤモンドの製造方法であり、好ましくは、前記原料ガスが、原料ガスの全量に対してH源ガスを50〜99.99vol%、H源ガスに対して、C源ガスを0.01〜50vol%、及び該C源ガスに対して、NF3ガスを0.001〜1vol%、含有することを特徴とする。【選択図】図1 |
Author | UMEZAKI YOSUKE HORIUCHI HIROSHI |
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DocumentTitleAlternate | 合成ダイヤモンドの製造方法 |
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Snippet | PROBLEM TO BE SOLVED: To provide a method for increasing the growth rate of a diamond when obtaining a synthetic diamond using a CVD method.SOLUTION: In the... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | METHOD FOR MANUFACTURING SYNTHETIC DIAMOND |
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