PHOTOELECTRIC CONVERSION ELEMENT AND MANUFACTURING METHOD THEREOF

• Main Authors: SHIRAHATA YASUHIRO, OKU TAKEO, SUZUKI ATSUSHI, FUKUNISHI SAKIKO, KONO KAZUFUMI
• Format: Patent
• Language: English; Japanese
• Published: 21.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a perovskite type photoelectric conversion element with high photoelectric conversion efficiency and a manufacturing method thereof.SOLUTION: In a photoelectric conversion element according to the present invention is a photoelectric conversion element including a perovskite layer containing a compound having a perovskite structure and a hole transport layer, the hole transport layer includes a compound represented by the following formula (1) and a polysilane. (In the formula, Z indicates the same or different arene ring, Rindicates the same or different alkoxy group, and k indicates the same or different 0 or more integer)SELECTED DRAWING: None 【課題】高い光電変換効率を有するペロブスカイト型の光電変換素子及びその製造方法を提供する。【解決手段】本発明の光電変換素子は、ペロブスカイト型構造を有する化合物を含むペロブスカイト層と正孔輸送層とを含む光電変換素子であって、前記正孔輸送層が、下記式（１）で表される化合物と、ポリシランとを含んでいる。（式中、Ｚは同一又は異なってアレーン環、Ｒ１は同一又は異なってアルコキシ基、ｋは同一又は異なって０以上の整数を示す。）【選択図】なし