SILICON CARBIDE SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which has improved reliability in a high temperature-high moisture bias environment.SOLUTION: A silicon carbide semiconductor device 201 comprises: a plurality of unit cells 100u located in an active region 100A; and a terminati...

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Main Authors SANO KOICHIRO, ISHIYAMA OSAMU, OOKA ATSUSHI, KIYOSAWA TSUTOMU, KUSUMOTO OSAMU, HASEGAWA TAKASHI, WAKAYAMA TAKAYUKI, SAITO KOICHI, SHINDO DAISUKE
Format Patent
LanguageEnglish
Japanese
Published 14.06.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which has improved reliability in a high temperature-high moisture bias environment.SOLUTION: A silicon carbide semiconductor device 201 comprises: a plurality of unit cells 100u located in an active region 100A; and a termination structure 100e located in a termination region 100E which surrounds the active region 100A. Each unit cell 100u has a transistor structure. The termination structure 100e includes: a second conductivity type second body region 115 which surrounds the active region 100A; at least one second conductivity type ring 120 which surrounds the second body region; at least one circumferential upper source electrode 112H; and an upper gate electrode 114. The silicon carbide semiconductor device further comprises: a first protection film 125 which is composed of silicon nitride and covers the upper source electrode 112H, the upper gate electrode 114 and at least an internal surface of the circumferential upper source electrode 112H, excluding a pad region; and a second protection film 126 which is composed of an organic material and covers the first protection film and at least the upside of the plurality of rings 120.SELECTED DRAWING: Figure 2A 【課題】高温高湿バイアス環境での信頼性が高められた炭化珪素半導体装置を提供する。【解決手段】炭化珪素半導体装置２０１は、活性領域１００Ａに位置する複数のユニットセル１００ｕと、活性領域１００Ａを囲む終端領域１００Ｅに位置する終端構造１００ｅとを備える。各ユニットセル１００ｕは、トランジスタ構造を備える。終端構造１００ｅは、活性領域１００Ａを囲む第２導電型の第２ボディ領域１１５と第２ボディ領域を囲む少なくとも１つの第２導電型のリング１２０と、少なくとも１つの外周上部ソース電極１１２Ｈと、上部ゲート電極１１４とを含む。さらに、窒化珪素からなり、パッド領域を除いて、上部ソース電極１１２Ｈおよび上部ゲート電極１１４と、少なくとも外周上部ソース電極１１２Ｈの内側面を覆う第１保護膜１２５と、有機材料からなり、第１保護膜と、少なくとも複数のリング１２０の上方とを覆う第２保護膜１２６が設けられている。【選択図】図２Ａ
Bibliography:Application Number: JP20170185066