SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: KUSUKAWA MASASHI, SHOYAMA TOSHIHIRO, ENDO NOBUYUKI
• Format: Patent
• Language: English; Japanese
• Published: 07.06.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve noise characteristics of a semiconductor device.SOLUTION: A semiconductor device comprising a photoelectric conversion part and a transfer part for transferring electric charges of the photoelectric conversion part comprises: a silicon layer having the photoelectric conversion part; a transfer electrode of the transfer part arranged on the silicon layer; and an insulator film having a first part positioned between the transfer electrode and silicon layer, and a second part positioned on the photoelectric conversion part. The first part and second part of the insulator film contain nitrogen, oxygen, and silicon, and the distance between a position where nitrogen concentration has a maximum value at the second part and the silicon layer is larger than the distance between a position where the nitrogen concentration has a maximum value at the first part and the silicon layer.SELECTED DRAWING: Figure 2 【課題】 半導体装置におけるノイズ特性を改善する。【解決手段】 光電変換部および光電変換部の電荷を転送する転送部を備える半導体装置であって、光電変換部を有するシリコン層と、シリコン層の上に配された、転送部の転送電極と、転送電極とシリコン層との間に位置する第１部分と、光電変換部の上に位置する第２部分と、を有する絶縁体膜と、を備え、絶縁体膜の第１部分および第２部分は窒素と酸素とシリコンとを含有しており、第２部分において窒素濃度が最大値を示す位置とシリコン層との間の距離は、第１部分において窒素濃度が最大値を示す位置とシリコン層との間の距離よりも大きい。【選択図】 図２