GALLIUM NITRIDE SUBSTRATE AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL

• Main Authors: KUBO SHUICHI, KAMATA KAZUNORI, IKEDA HIROTAKA, MATSUMOTO SO, MIKAWA YUTAKA, OHATA TATSUHIRO, TSUKADA YUSUKE, FUJISAWA HIDEO
• Format: Patent
• Language: English; Japanese
• Published: 07.06.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a non-polar or semi-polar GaN substrate capable of epitaxially growing a nitride semiconductor crystal having a low stacking fault density on the main surface, and a technique required for the manufacturing.SOLUTION: The GaN substrate has a first main surface and a second main surface on the side opposite thereto. An angle formed between the normal vector of the first main surface 11 and a<10-10>direction is 0-10°; an n type carrier concentration is 3×10cmor more; and a stacking fault density on the first main surface is 50 cmor less.SELECTED DRAWING: Figure 1 【課題】その主表面上に積層欠陥密度の低い窒化物半導体結晶をエピタキシャル成長させ得る非極性または半極性ＧａＮ基板と、その製造に必要な技術の提供。【解決手段】第１主表面およびその反対側の第２主表面を有し、該第１主表面１１の法線ベクトルが＜１０−１０＞方向となす角度が０〜１０°であり、ｎ型キャリア濃度が３×１０１８ｃｍ−２以上、かつ、該第１主表面における積層欠陥密度が５０ｃｍ−１以下である、窒化ガリウム基板。【選択図】図１