METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• Main Authors: INAZU TETSUHIKO, NIWA NORITAKA, IGARASHI KAZUNARI
• Format: Patent
• Language: English; Japanese
• Published: 31.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To reduce the contact resistance of an n-side electrode of a semiconductor light-emitting element.SOLUTION: A method for manufacturing a semiconductor light-emitting element 10 comprises the steps of: forming an active layer 26 made of an AlGaN-based semiconductor material on an n-type clad layer 24 made of an n-type AlGaN-based semiconductor material; forming a p-type semiconductor layer on the active layer 26; dry etching parts of the p-type semiconductor layer, the active layer 26, and the n-type clad layer 24 so as to expose a partial region of the n-type clad layer 24; reacting a nitrogen atom (N) with a partial region in which the n-type clad layer 24 is exposed; and forming an n-side electrode 32 on a partial region of the n-type clad layer 24 reacted with the nitrogen atom.SELECTED DRAWING: Figure 1 【課題】半導体発光素子のｎ側電極のコンタクト抵抗を低減する。【解決手段】半導体発光素子１０の製造方法は、ｎ型ＡｌＧａＮ系半導体材料のｎ型クラッド層２４上にＡｌＧａＮ系半導体材料の活性層２６を形成する工程と、活性層２６上にｐ型半導体層を形成する工程と、ｎ型クラッド層２４の一部領域が露出するように、ｐ型半導体層、活性層２６およびｎ型クラッド層２４の一部をドライエッチングする工程と、ｎ型クラッド層２４の露出した一部領域に窒素原子（Ｎ）を反応させる工程と、窒素原子を反応させたｎ型クラッド層２４の一部領域上にｎ側電極３２を形成する工程と、を備える。【選択図】図１