MANUFACTURING METHOD OF SUBSTRATE TERMINAL BOARD FOR FITTING SEMICONDUCTOR ELEMENT

• Main Authors: YUASA MAMORU, WAKABAYASHI SHOJIRO, NAKAGAWA MASAYA, WATANABE TOSHIFUMI
• Format: Patent
• Language: English; Japanese
• Published: 24.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; BLASTING; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF; HEATING; LIGHTING; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; MECHANICAL ENGINEERING; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR; WEAPONS

PROBLEM TO BE SOLVED: To obtain a substrate terminal plate in which heat release is good with a simple structure, by reducing the number of components while ensuring heat dissipation by using a conductor plate, constituting the substrate terminal plate, itself.SOLUTION: Radiation fins 14 and heat sinks 15 are provided by cutting and raising the radiation fins 14 at multiple positions around the element fitting part of a conductor plate 10 for upper substrate. An upper substrate 3 is formed by coating the conductor plate 10 for upper substrate with a painted film 7, and a lower substrate 2 is formed by coating a conductor plate 6 for lower substrate with the painted film 7. Heat treatment processing for compressing the lower substrate 2 and the upper substrate 3 in a superposed state from above and below and heating them, are performed to the lower substrate 2 and the upper substrate 3 and the painted film 7 is hardened completely, thus bonding the painted films 7 of the lower substrate 2 and upper substrate 3.SELECTED DRAWING: Figure 1 【課題】基板端子板を構成する導体板自体を利用して放熱性を確保しながら部品点数を削減し、簡易な構造でありながらも放熱が良好となる基板端子板を得る。【解決手段】上基板用導体板１０での素子取付部の周囲となる複数位置で放熱フィン１４の切り起こしを行なって、放熱フィン１４と放熱口１５とを設けて、この上基板用導体板１０を塗装膜７で被覆して上基板３を形成するとともに、下基板用導体板６を塗装膜７で被覆して下基板２を形成し、下基板２と上基板３とを重ね合わせて上下から加圧するとともに加熱する加圧加熱処理を下基板２と上基板３とに施して、塗装膜７を完全硬化させることにより、下基板２の塗装膜７と上基板３の塗装膜７とを接着させる。【選択図】図１