MANUFACTURING METHOD OF METAL OXIDE THIN FILM, AND THIN FILM MANUFACTURING APPARATUS

PROBLEM TO BE SOLVED: To provide a metal oxide thin film manufacturing method capable of acquiring a metal oxide thin film of a high melting metal by an inexpensive and simple construction, and a thin film manufacturing apparatus.SOLUTION: A method for manufacturing a metal oxide thin film having a...

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Bibliographic Details
Main Authors SAITO SHUNSUKE, SANO SHINJI, WATANABE HIROHIKO
Format Patent
LanguageEnglish
Japanese
Published 24.05.2018
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Summary:PROBLEM TO BE SOLVED: To provide a metal oxide thin film manufacturing method capable of acquiring a metal oxide thin film of a high melting metal by an inexpensive and simple construction, and a thin film manufacturing apparatus.SOLUTION: A method for manufacturing a metal oxide thin film having a higher metal evaporation temperature than the evaporation temperature of a metal oxide includes: a preparing step of pouring a substrate 1 into a chamber 4; an evacuation step of evacuating the inside of the chamber 4 after said preparing step; a metal oxide producing step of heating a metal 2 disposed in the chamber 4, after said evacuation step thereby to produce a metal oxide; and a filming step of heating said metal oxide to an evaporation temperature and depositing the same on said substrate 1. Preferably, said metal is tungsten, and hydrogen in the chamber 4 is added at the metal oxide producing step.SELECTED DRAWING: Figure 1 【課題】高融点金属の金属酸化物薄膜を安価かつ簡易な構成で得ることができる金属酸化物薄膜の製造方法及び薄膜製造装置。【解決手段】基材1をチャンバ4内に投入する準備工程と、前記準備工程後、チャンバ4内を排気する減圧工程と、前記減圧工程後、チャンバ4内に設置した金属2を加熱して金属酸化物を生成させる金属酸化物生成工程と、前記金属酸化物を蒸発温度まで加熱し、前記基材1上に堆積させる成膜工程とを含む、金属酸化物の蒸発温度より金属の蒸発温度が高い金属酸化物薄膜の製造方法及び薄膜製造装置。好ましくは、前記金属がタングステンテンであり、金属酸化物生成工程において、チャンバ4内水素を添加する、方法。【選択図】図1
Bibliography:Application Number: JP20160223729