PHOTO-DETECTOR

• Main Authors: SASAKI KEITA, FUNAKI HIDEYUKI, UENO RISAKO
• Format: Patent
• Language: English; Japanese
• Published: 17.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a photo-detector capable of improving sensitivity to light in a near-infrared region with a simple configuration.SOLUTION: A photo-detector 10 includes a first surface 15A to which at least a part of light in a near-infrared region is made incident; a second surface 15B at an opposite side to the first surface 15A; an optical detection region 140 for detecting the light; a reflective layer 20 provided at a second surface 15B side in an optical detection region to reflect the light; and a quenching resistor 32 connected in series to the optical detection region 140 without through bump junction. The reflection layer 20 is provided between the optical detection region 140 and the quenching resistor 32.SELECTED DRAWING: Figure 1 【課題】簡易な構成で、近赤外領域の光に対する感度を向上させることができる、光検出器を提供する。【解決手段】光検出器１０は、近赤外領域の少なくとも一部の光が入射する第１面１５Ａと第１面１５Ａの反対側の第２面１５Ｂとを有し、光を検出する光検出領域１４０と、光検出領域の第２面１５Ｂ側に設けられ、光を反射する反射層２０と、光検出領域１４０にバンプ接合を介さずに直列に接続されたクエンチング抵抗３２と、を備える。反射層２０は、光検出領域１４０とクエンチング抵抗３２との間に設けられる。【選択図】図１