SEMICONDUCTOR LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To achieve high luminous efficiency and suppression of color unevenness in a luminous surface.SOLUTION: The semiconductor light-emitting device includes: a light-emitting element 10; a wavelength conversion layer 12 for converting the light emitted from the light-emitting eleme...

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Bibliographic Details
Main Author TACHIBANA YOSHIORI
Format Patent
LanguageEnglish
Japanese
Published 17.05.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To achieve high luminous efficiency and suppression of color unevenness in a luminous surface.SOLUTION: The semiconductor light-emitting device includes: a light-emitting element 10; a wavelength conversion layer 12 for converting the light emitted from the light-emitting element into the light with a predetermined wavelength; a light reflection member 13 covering at least a side face of the wavelength conversion layer; and a thin film 14 provided on an outermost surface from which the light subjected to wavelength conversion in the wavelength conversion layer emits, which has a property of rejecting the uncured light reflection member and whose surface is coarse.SELECTED DRAWING: Figure 1 【課題】発光効率を向上させると共に発光面における色ムラを抑制する。【解決手段】発光素子１０と、該発光素子から出射される光を所定波長の光に変換する波長変換層１２と、少なくとも前記波長変換層の側面を覆う光反射部材１３と、前記波長変換層の波長変換された光が出射する最表面に設けられ、未硬化の前記光反射部材をはじく性質を有し、表面が粗面である薄膜１４と、を備えた半導体発光装置を提供する。【選択図】図１
Bibliography:Application Number: JP20160218246