SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: ICHIKAWA MASATSUGU, OKA YUTA
• Format: Patent
• Language: English; Japanese
• Published: 17.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To simply manufacture a semiconductor device which can improve heat rejection properties of heat generated in a first element and a second element and which has excellent insulation resistance between a substrate and wiring.SOLUTION: A semiconductor device manufacturing method comprises the steps of: forming a substrate metal film on an upper surface of a substrate composed of metal; forming a first element metal film on a lower surface of the substrate; forming a second element metal film on a lower surface of the second element; joining the first element and the second element to the substrate so as to contact the upper surface of the substrate metal film with the lower surface of the first element metal film and the lower surface of the second element metal film; oxidizing at least part of a region other than a region where the first element metal film contacts and a region where the second element metal film contacts out of the upper surface of the substrate metal film; and forming wiring for electrically connecting the first element and the second element above the region oxidized in the oxidizing step.SELECTED DRAWING: Figure 2 【課題】 第１素子及び第２素子で生じる熱の排熱性を向上させることができ、基板と配線との間の絶縁耐性に優れた半導体装置を簡便に製造する。【解決手段】金属からなる基板の上面に、基板用金属膜を形成する工程と、第１素子の下面に、第１素子用金属膜を形成する工程と、第２素子の下面に、第２素子用金属膜を形成する工程と、前記基板用金属膜の上面と、前記第１素子用金属膜の下面及び前記第２素子用金属膜の下面と、が接するように、前記基板に前記第１素子及び前記第２素子を接合する工程と、前記基板用金属膜の上面のうち、前記第１素子用金属膜が接する領域と前記第２素子用金属膜が接する領域とを除いた領域の少なくとも一部を酸化する工程と、前記酸化する工程において酸化された領域の上方に、前記第１素子と前記第２素子とを電気的に接続する配線を形成する工程と、を有する半導体装置の製造方法。【選択図】図２