CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS AND CHARGED PARTICLE BEAM LITHOGRAPHY METHOD
PROBLEM TO BE SOLVED: To prevent degradation of drawing accuracy, by measuring stage position accurately.SOLUTION: A charged particle beam lithography apparatus includes a laser interferometer 70, a waveform variation detector 8, and a drawing section 2 for drawing a pattern by irradiating a specime...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English Japanese |
Published |
10.05.2018
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To prevent degradation of drawing accuracy, by measuring stage position accurately.SOLUTION: A charged particle beam lithography apparatus includes a laser interferometer 70, a waveform variation detector 8, and a drawing section 2 for drawing a pattern by irradiating a specimen W with a charged particle beam. The waveform variation detector 8 separates laser light into laser light for 1 path and laser light for 2 paths, irradiates a reflector 88 placed in a lithography chamber 2a with the separated laser light, and outputs a first beat signal by 1 path interference and a second beat signal by 2 path interference. A drawing control section 3c calculates a waveform variation factor of laser light based on the difference of the first and second beat signals, corrects the positional information of a stage 11 measured by the laser interferometer 70, and controls the drawing section 2 based on the corrected stage position information.SELECTED DRAWING: Figure 2
【課題】ステージ位置を精度良く計測し、描画精度の低下を防止する。【解決手段】本実施形態による荷電粒子ビーム描画装置は、レーザ干渉計70と、波長変動検出部8と、試料Wに荷電粒子ビームを照射してパターンを描画する描画部2とを備える。波長変動検出部8は、レーザ光を1パス用のレーザ光と2パス用のレーザ光とに分離し、描画室2a内に配置された反射鏡88に照射し、1パス干渉による第1ビート信号と2パス干渉による第2ビート信号を出力する。描画制御部3cは、第1ビート信号と第2ビート信号との差分に基づいてレーザ光の波長変動係数を算出し、レーザ干渉計70により計測されたステージ11の位置情報を補正し、補正後のステージ位置情報に基づいて描画部2を制御する。【選択図】図2 |
---|---|
Bibliography: | Application Number: JP20160209573 |