CHAMBER WITH FLOW-THROUGH SOURCE

• Main Author: DMITRY LUBOMIRSKY
• Format: Patent
• Language: English; Japanese
• Published: 10.05.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide improved plasma sources and processing chambers, which can be used to produce high quality devices and structures.SOLUTION: A processing chamber 500 includes: a chamber housing 503 at least partially defining an interior region of a semiconductor processing chamber; and a showerhead 525 positioned within the chamber housing 503. The showerhead 525 may divide the interior region into a remote region and a processing region in which a substrate can be contained. The processing chamber 500 may also include an inductively coupled plasma source 550 positioned between the showerhead 525 and the processing region.SELECTED DRAWING: Figure 5 【課題】高品質のデバイス及び構造を形成するために使用することができる改良されたプラズマ源及び処理チャンバを提供する。【解決手段】処理チャンバ５００は、半導体処理チャンバの内部領域を少なくとも部分的に画定するチャンバハウジング５０３、チャンバハウジング５０３内に位置付けられたシャワーヘッド５２５で構成される。シャワーヘッド５２５は、内部領域を遠隔領域と基板を含むことができる処理領域に分割され、さらに、処理チャンバ５００は、シャワーヘッド５２５と処理領域との間に位置付けられた誘導結合プラズマ源５５０も含む。【選択図】図５