METHOD FOR FORMING ULTRA-FINE PROTRUSIONS

• Main Authors: TAKAMURA SHUICHI, FUJITA KAZUNOBU, YAMADA KOHEI, MAENAKA SHIRO
• Format: Patent
• Language: English; Japanese
• Published: 26.04.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To form silicon with a high light conversion efficiency.SOLUTION: A plasma irradiation device 10 causes gas discharge of helium between a hot cathode 11 (LaB6) and a copper positive electrode 12 to generate plasma of a high density over 10m, and applies helium ions thereof to a surface of a silicon substrate. Thus, cone-like silicon fine protrusions having an aspect ratio of about 3 and a height of about 300 nm are formed on the surface. In the plasma irradiation device, the electron density is 10m, the electron temperature is about 5 eV, the incident ion energy is 40 eV, and the irradiation temperature is 500°C.SELECTED DRAWING: Figure 2 【課題】光変換効率の高いシリコンを形成する。【解決手段】プラズマ照射装置１０は、ヘリウムを熱陰極１１（LaB6）と銅陽極１２の間でガス放電させ、1018m-3を超える高密度のプラズマを発生させ、このヘリウムイオンをシリコン基板表面に照射する。これにより、表面に、アスペクト比３程度の高さ300nm程度のコーン状のシリコン微細突起が形成される。また、電子密度を1018m-3、電子温度を5eV程度、入射イオンエネルギーを40eV、照射温度を500℃とした。【選択図】図２