METHOD OF FORMING N-ELECTRODE ON NITRIDE SEMICONDUCTOR LAYER AND MANUFACTURING METHOD OF SEMICONDUCTOR LASER ELEMENT

• Main Authors: KAWADA YASUHIRO, UEDA SHOHEI, TANISAKA SHINGO, YUTO HIROAKI
• Format: Patent
• Language: English; Japanese
• Published: 12.04.2018
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method of forming an n-electrode on a nitride semiconductor layer, which can suppress time degradation of ohmic characteristics, and to provide a manufacturing method of a semiconductor laser element.SOLUTION: A method of forming an n-electrode to a nitride semiconductor layer comprises: a process of subjecting directional plasma treatment on a nitrogen surface of a nitride semiconductor layer in an oxygen-containing atmosphere; and a process of forming the n-electrode on the nitrogen surface of the nitride semiconductor layer which is subjected to the plasma treatment.SELECTED DRAWING: Figure 1 【課題】オーミック特性の経時劣化を抑制できる窒化物半導体層にｎ電極を形成する方法及び半導体レーザ素子の製造方法を提供する。【解決手段】酸素を含む雰囲気中において、指向性を有するプラズマ処理を窒化物半導体層の窒素面に対して行う工程と、前記プラズマ処理された窒化物半導体層の窒素面にｎ電極を形成する工程と、を有する窒化物半導体層にｎ電極を形成する方法である。【選択図】図１