SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Author: INOUE MASAHITO
• Format: Patent
• Language: English; Japanese
• Published: 08.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device having a connection structure where a contact area between a via and a thin film conductor increases without being associated with increase in via hole diameter and increase in film thickness of the thin film conductor thereby to reduce variation in contact resistance between the via and the thin film conductor.SOLUTION: A semiconductor device 1 has a connection structure of a first conductor 5 and second conductors 6 by vias 7 formed in an insulation film 4 on a semiconductor substrate 2. The first conductor 5 is filmy. The connection structure includes in the insulation film 4 where the first conductor 5 exists, filmy third conductors 8 each of which has a portion overlapping the first conductor 5 in a contact condition and a portion contacting the via 7. An area of the third conductor 8 in plan view is larger than an area of the via 7 in plan view.SELECTED DRAWING: Figure 1 【課題】ビアホール径の拡大および薄膜導体の膜厚増大を伴わずに、ビアと薄膜導体との接触面積が増大し、ビアと薄膜導体との接触抵抗のばらつきが低減された接続構造を有する半導体装置を提供する。【解決手段】半導体装置１は、半導体基板２上の絶縁膜４に形成されたビア７による第一導体５と第二導体６との接続構造を有する。第一導体５は薄膜状である。接続構造は、第一導体５が存在する絶縁膜４内に、薄膜状で、第一導体５と接触状態で重なる部分およびビア７と接触する部分を有する第三導体８を備える。第三導体８の平面視での面積がビア７の平面視での面積よりも大きい。【選択図】図１