CLUSTER INJECTION TYPE PROCESSING METHOD AND DEVICE

• Main Authors: MATSUO JIRO, KOIKE KUNIHIKO, SENOO TAKEHIKO, SOJO TADASHI, IZUMI KOICHI, SEKI TOSHIO
• Format: Patent
• Language: English; Japanese
• Published: 08.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a cluster injection type processing method capable of performing a processing of a three-dimensional complicated shape without applying an electric damage.SOLUTION: A cluster injection type processing method includes: a supply step of supplying a mixture gas formed by a reactive gas and a gas of which a boiling point is lower than that of the reactive gas; a cluster generation step of making the mixture gas eject into a vacuum processing chamber while performing adiabatic expansion by a pressure of a range where the mixture gas is not liquified, and generating the reactive cluster which is an electrically neutral state; and a processing step of ejecting the reactive cluster to a processing object in the vacuum processing chamber, and performing the processing by a chemical reaction to the processing object. The processing step includes: a first processing of processing the processing object by ejecting so that an ejection direction of the reactive cluster for the processing object becomes a first angle and processing the processing object; and a second processing of processing the processing object by ejecting so that the reactive cluster ejection direction for the processing object becomes a second angle different from the first angle.SELECTED DRAWING: Figure 4 【課題】電気的なダメージを与えず、三次元的な複雑形状の加工ができるクラスタ噴射式加工方法を提供する。【解決手段】反応性ガスと上記反応性ガスより低沸点のガスとからなる混合ガスを供給する供給ステップと、上記混合ガスを液化させない範囲の圧力で断熱膨張させながら真空処理室内に噴出させて、電気的に中性な反応性クラスタを生成するクラスタ生成ステップと、上記反応性クラスタを上記真空処理室内の加工対象物に対して噴射して、上記加工対象物に化学的な反応による加工を行う加工ステップとを備え、上記加工ステップは、上記加工対象物に対する上記反応性クラスタ噴射方向が第１の角度となるよう噴射して上記加工対象物を加工する第１の加工と、上記加工対象物に対する上記反応性クラスタ噴射方向が上記第１の角度と異なる第２の角度となるよう噴射して上記加工対象物を加工する第２の加工とを行う。【選択図】図４