DIAMOND CONTACT STRUCTURE AND ELECTRONIC ELEMENT USING THE SAME

• Main Authors: OISHI TOSHIYUKI, KAKAZU MAKOTO, SHIRAISHI KENJI, MIYAZAKI SEIICHI, OSHIMA TAKAHITO
• Format: Patent
• Language: English; Japanese
• Published: 01.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a novel diamond contact structure useful for realizing normally-off operation, and an electronic element using such a structure.SOLUTION: A diamond contact structure including a diamond substrate 10 and a first oxide layer 12 is provided. The diamond substrate 10 is provided with a first p-type region P1 and a second p-type region P2 including a natural hole and separated from each other, at least on the surface, and the first oxide layer 12 is provided between these p-type regions P1, P2. The first oxide layer 12 is composed of a first metal oxide having a lowest unoccupied molecular orbital on the higher energy side than the valence band of diamond, and the surface of the diamond substrate 10 in contact with the first oxide layer 12 is a non-p-type region where the natural hole is not included.SELECTED DRAWING: Figure 3 【課題】ノーマリーオフ動作の実現に有用な新規なダイヤモンドコンタクト構造と、かかる構造を利用した電子素子とを提供する。【解決手段】ダイヤモンド基板１０と第１酸化物層１２とを備えるダイヤモンドコンタクト構造１が提供される。ダイヤモンド基板１０は、自然正孔を含み、互いに離間する第１ｐ型領域Ｐ１と第２ｐ型領域Ｐ１とを少なくとも表面に備えており、第１酸化物層１２は、これらｐ型領域Ｐ１，Ｐ２間に備えられる。また、第１酸化物層１２は、ダイヤモンドの価電子帯よりも高エネルギー側に最低空軌道を有する第１金属酸化物からなり、第１酸化物層１２に接するダイヤモンド基板１０の表面は、自然正孔が含まれない非ｐ型領域である。【選択図】図３