FILM DEPOSITION METHOD

• Main Authors: MIZUNO YUSUKE, KIYOTA JUNYA
• Format: Patent
• Language: English; Japanese
• Published: 01.03.2018
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film deposition method capable of depositing a film of an aluminum oxide film having a stress within a predetermined value at a good productivity while a predetermined film deposit rate is maintained.SOLUTION: This invention deposits an aluminum oxide film on a substrate surface by arranging a substrate S and an aluminum or an aluminum oxide target 2, 2in a vacuum chamber 1, introducing either a reaction gas including an inert gas and oxygen or the inert gas only in the vacuum chamber in a vacuum atmosphere, inputting a predetermined power to the target, and sputtering the target. A refractive index of the aluminum oxide film deposited is measured, and a sputtering condition is changed according to a measured refractive index.SELECTED DRAWING: Figure 1 【課題】所定の成膜レートを維持したまま、応力が所定値以内の酸化アルミニウム膜を生産性よく成膜することができる成膜方法を提供する。【解決手段】本発明では、真空チャンバ１内に基板Ｓと、アルミニウム製または酸化アルミニウム製のターゲット２１，２２とを配置し、真空雰囲気中の真空チャンバ内に希ガス及び酸素含有の反応ガスまたは希ガスのみを導入し、ターゲットに所定電力を投入してターゲットをスパッタリングすることで基板表面に酸化アルミニウム膜を成膜する。成膜した酸化アルミニウム膜の屈折率を測定し、測定した屈折率に応じてスパッタ条件を変更して酸化アルミニウム膜を成膜する。【選択図】図1