SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Author: TANIGUCHI KATSUMI
• Format: Patent
• Language: English; Japanese
• Published: 22.02.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device which can strongly resist to temperatures and pressures.SOLUTION: A semiconductor device 100 includes: a plurality of semiconductor units 20A to 20C each having a semiconductors 12 and 13, a unit housing 11 sealing the semiconductor element, and a first unit terminal 16 exposed in a first recess part 11a on the upper surface of the unit housing; a first unit connection part having first connection terminals 43S connected to the first unit terminal, respectively corresponding to the semiconductor units, a first connection conductor 43Sconnecting the first connection terminals to one another, and a first connection conductor sealing part 40asealing the first connection conductor and making the first connection terminals exposed; and a plurality of first recess sealing parts 45a respectively corresponding to the semiconductor units for sealing the connection parts between the first unit terminal and the first connection terminals in the inside of the first recess.SELECTED DRAWING: Figure 7 【課題】高耐熱且つ高耐圧の半導体装置を提供する。【解決手段】半導体装置１００は、それぞれが半導体素子１２，１３、半導体素子を封止するユニット筐体１１、およびユニット筐体の上面に設けられた第１凹部１１ａ内に露出する第１ユニット端子１６を有する複数の半導体ユニット２０Ａ〜２０Ｃ、複数の半導体ユニットのそれぞれに対応して第１ユニット端子に接続される第１接続端子４３Ｓ、複数の第１接続端子間を接続する第１接続導体４３Ｓ０、および、第１接続導体を封止し複数の第１接続端子を露出させる第１接続導体封止部４０ａ０を有する第１ユニット接続部、及び複数の半導体ユニットのそれぞれに対応して、第１凹部の凹み内において、第１ユニット端子および第１接続端子の間の接続部をそれぞれ封止する複数の第１凹み封止部４５ａを備える。【選択図】図７