SEMICONDUCTOR DEVICE

• Main Author: ANZAI TAKESHI
• Format: Patent
• Language: English; Japanese
• Published: 08.02.2018
• Subjects: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS; BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CONTROL OR REGULATION THEREOF; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; GENERATION; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device with a structure suitable for reduction in size and weight, which can cool a pair of semiconductor devices with less installation area.SOLUTION: A semiconductor device comprises: an insulation material 7 and a P pole electrode plate 17P which are sequentially placed on a cooler 3 and each component is thermally connected with the neighboring component; an upper-arm IGBT 11U and an upper-arm free-wheeling diode 13U which are bonded to the P pole electrode plate 17P and a bus bar 19 which is overlapped on the IGBT 11U and the free-wheeling diode 13U via a wiring board 15U and each component is electrically connected with the neighboring component; a lower-arm IGBT 11L and a lower-arm free-wheeling diode 13L which are bonded to the bus bar 19 so as to be opposed to the upper-arm IGBT 11U and the upper-arm free-wheeling diode 13U; an N pole electrode plate 17N bonded to the lower-arm IGBT 11L and the lower-arm free-wheeling diode 13L; and a graphite block 23 which has thermal conductivity higher than that of a route through the upper-arm IGBT 11U, the upper-arm free-wheeling diode 13U and the P pole electrode plate 17P and directly and thermally connect the bus bar 19 and the insulation material 7.SELECTED DRAWING: Figure 1 【課題】一対の半導体デバイスを少ない設置面積で冷却できる、小型、軽量化に適した構造の半導体装置を提供する。【解決手段】冷却装置３に絶縁材７とＰ極の電極板１７Ｐを順次載置して、隣り合う部品間を熱的にそれぞれ接続し、Ｐ極の電極板１７Ｐに上アームのＩＧＢＴ１１Ｕや還流ダイオード１３Ｕを接合する。これらに熱伝導率の低い配線基板１５Ｕを介してバスバ１９を重ねて、隣り合う部品間を電気的にそれぞれ接続する。また、上アームのＩＧＢＴ１１Ｕや還流ダイオード１３Ｕと対向するように、バスバ１９に下アームのＩＧＢＴ１１Ｌや還流ダイオード１３Ｌを接合して、これらにＮ極の電極板１７Ｎを接合し、上アームのＩＧＢＴ１１Ｕや還流ダイオード１３Ｕ及びＰ極の電極板１７Ｐを経由する経路よりも熱伝導率が高いグラファイトブロック２３で、バスバ１９と絶縁材７とを直接熱的に接続する。【選択図】図１