SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which achieves excellent electrical connection reliability when assuming that manufacturing efficiency of the semiconductor device is improved without using a mechanical technique for exposure of a conductor post.SOLUT...

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Bibliographic Details
Main Authors SHINOZAKI HIROKI, MORI HIRONARI, MITSUTA MASAYA
Format Patent
LanguageEnglish
Japanese
Published 01.02.2018
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which achieves excellent electrical connection reliability when assuming that manufacturing efficiency of the semiconductor device is improved without using a mechanical technique for exposure of a conductor post.SOLUTION: A semiconductor device manufacturing method of the present embodiment includes in the following order: a conductor part formation step of forming on a substrate 10 having a conductor pattern 20, a plurality of conductor parts 40 having the same heights from a surface of the substrate 10; a coating step of introducing a thermosetting resin composition 50 to each clearance between neighboring conductor parts 40 and covering he conductor parts 40 by a hardened material 60 of the thermosetting resin composition 50 in such a manner as to expose tops 92 of the conductor parts 40; and a multilayer wiring step of forming on the hardened material 60, a metal pattern to be electrically connected with the tops 92 without grinding a surface of the hardened material 60.SELECTED DRAWING: Figure 1 【課題】導体ポストの露出に機械的手法を用いないことで、半導体装置の製造効率を向上させることを前提に、電気的接続の信頼性に優れる半導体装置の製造方法を提供する。【解決手段】本発明の半導体装置の製造方法は、導体パターン20を有する基板10上に、基板10の表面からの高さが同じである複数の導体部40を形成する導体部形成工程と、隣接する導体部40の間隙に熱硬化性樹脂組成物50を導入し、導体部40の頂部92が露出するように熱硬化性樹脂組成物50の硬化物60で導体部40を覆う被覆工程と、硬化物60の表面を研磨することなく、硬化物60の上に頂部92と電気的に接続する金属パターンを形成する多層配線工程と、をこの順に含む。【選択図】図1
Bibliography:Application Number: JP20170122017