PATTERN TREATMENT METHOD

• Main Authors: PARK JONG KEUN, PHILLIP D HUSTAD, LI MINGQI, SUNG JIN WUK, JOSHUA A KAITZ, VIPUL JAIN, WU CHUNYI
• Format: Patent
• Language: English; Japanese
• Published: 01.02.2018
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a high resolution pattern treatment method using a solvent development type negative chemically amplified resist in the manufacture of a semiconductor device.SOLUTION: A pattern treatment method is provided, which comprises: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition on (a), the pattern treatment composition comprising an organic solvent and a block copolymer comprising (i) a first block including a first unit formed from 4-vinyl-pyridine and (ii) a second block including a first unit formed from a vinyl aromatic monomer; and (c) removing the pattern treatment composition from the substrate. A pattern spacing can be reduced compared to a pattern spacing of the patterned feature prior to the application of the pattern treatment composition.SELECTED DRAWING: None 【課題】半導体デバイス製造に於いて、溶剤現像ネガ型化学増幅レジストを使用した高解像度パターン処理法を提供する。【解決手段】（ａ）表面上にパターン形成特徴部を備える半導体基板を準備し、（ｂ）（ａ）上に、（ｉ）４−ビニル−ピリジンから形成される第１の単位を含む第１のブロックと、（ｉｉ）ビニル芳香族モノマーから形成される第１の単位を含む第２のブロック、とを含むブロックコポリマー、及び有機溶媒を含む、パターン処理組成物を塗布し、（ｃ）パターン処理組成物を基板から除去する、パターン処理法。パターン処理組成物を塗布する前のパターン形成特徴部のパターン間隔と比較して、パターン間隔を低減できる。【選択図】なし