DISPLAY DEVICE
PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting excellent electrical characteristics, a display device including the same, and a manufacture method of the semiconductor device and the display device.SOLUTION: The display device comprises a plurality of pixels, at least one of whic...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
18.01.2018
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a semiconductor device exhibiting excellent electrical characteristics, a display device including the same, and a manufacture method of the semiconductor device and the display device.SOLUTION: The display device comprises a plurality of pixels, at least one of which having a first transistor and a light-emitting element. The first transistor includes, a gate electrode, a gate insulation film on the gate electrode, an oxide semiconductor film on the gate insulation film, and a first terminal and a second terminal electrically connected to the oxide semiconductor film. The second terminal is electrically connected to the light-emitting element. A region where the first terminal overlaps the gate electrode can made smaller than a region where the second terminal overlaps the gate electrode.SELECTED DRAWING: Figure 1
【課題】優れた電気特性を示す半導体装置、ならびにそれを含有する表示装置、および半導体装置、表示装置の作製方法を提供することを課題の一つとする。【解決手段】複数の画素を有し、複数の画素のうち少なくとも一つが第1のトランジスタと発光素子を有する表示装置が提供される。第1のトランジスタはゲート電極、ゲート電極上のゲート絶縁膜、ゲート絶縁膜上の酸化物半導体膜、および酸化物半導体膜と電気的に接続する第1の端子と第2の端子を含む。第2の端子は発光素子と電気的に接続される。第1の端子がゲート電極と重なる領域は、第2の端子がゲート電極と重なる領域よりも小さくすることができる。【選択図】図1 |
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Bibliography: | Application Number: JP20160140360 |