METHOD FOR MANUFACTURING NEUTRON IRRADIATED SILICON SINGLE CRYSTAL

• Main Author: HAYAKAWA YUTAKA
• Format: Patent
• Language: English; Japanese
• Published: 18.01.2018
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a neutron irradiated silicon single crystal, capable of obtaining the neutron irradiated silicon single crystal accurately having a target resistivity.SOLUTION: The method for manufacturing a silicon single crystal having a predetermined resistivity by irradiating a grown silicon single crystal ingot with neutron under specific conditions to dope phosphorus comprises: setting a plurality of neutron irradiation doses having a different irradiation dose for each silicon single crystal under the specific conditions when calculating a target neutron irradiation dose for obtaining the predetermined resistivity to irradiate the silicon single crystals with the neutron; measuring the resistivities of the plurality of doped silicon single crystals obtained at the respective neutron irradiation doses; and setting a value in a predetermined range including a neutron irradiation dose forming a resistivity obtained by a calibration curve previously calculated and showing a relation between the neutron irradiation dose and the resistivity being the predetermined resistivity as the target neutron irradiation dose.SELECTED DRAWING: Figure 3 【課題】正確に目標抵抗率を有する中性子照射シリコン単結晶を得ることができる中性子照射シリコン単結晶の製造方法を提供する。【解決手段】育成されたシリコン単結晶のインゴットに固有条件の下で中性子を照射し、リンをドーピングすることで所定の抵抗率のシリコン単結晶を製造する方法において、前記所定の抵抗率を得るための目標中性子照射量を算出するにあたり、前記固有条件の下、シリコン単結晶毎に中性子照射量が異なる複数の中性子照射量を設定して中性子を照射し、各中性子照射量について得られた、複数の前記ドーピングされたシリコン単結晶の抵抗率を測定し、前記中性子照射量と前記抵抗率との関係を示す検量線を予め求めておき、前記検量線による抵抗率が前記所定の抵抗率になる中性子照射量を含む所定範囲の値を、前記目標中性子照射量とする。【選択図】 図３