STORAGE DEVICE

• Main Authors: KAMATA YOSHIKI, KUNISHIMA IWAO, ASAO YOSHIAKI, MOROTA MISAKO
• Format: Patent
• Language: English; Japanese
• Published: 11.01.2018
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a storage device capable of suppressing mutual interference between adjacent memory cells.SOLUTION: A storage device according to one embodiment of the present invention includes: a first conductive layer; a second conductive layer; a third conductive layer intersecting with the first conductive layer and the second conductive layer; and a resistance change layer including a first region formed between the first conductive layer and the third conductive layer and having a superlattice structure, a second region formed between the second conductive layer and the third conductive layer and having a superlattice structure, and a third region which is formed between the first region and the second region and in which concentration of at least one element selected from a group composed of oxygen (O), fluorine (F), carbon (C), phosphorus (P), boron (B), nitrogen (N), hydrogen (H), bismuth (B), cadmium (Cd), zinc (Zn), gallium (Ga), selenium (Se), aluminum (Al), sulfur (S), beryllium (Be), indium (In), and lead (Pb) is higher than that of the first region and the second region.SELECTED DRAWING: Figure 3 【課題】隣接するメモリセルの間の相互干渉を抑制することが可能な記憶装置を提供する。【解決手段】実施形態の記憶装置は、第１の導電層と、第２の導電層と、第１の導電層及び第２の導電層と交差する第３の導電層と、第１の導電層と第３の導電層との間に設けられ超格子構造を有する第１の領域と、第２の導電層と第３の導電層との間に設けられ超格子構造を有する第２の領域と、第１の領域と第２の領域との間に設けられ酸素（Ｏ）、フッ素（Ｆ）、炭素（Ｃ）、リン（Ｐ）、ボロン（Ｂ）、窒素（Ｎ）、水素（Ｈ）、ビスマス（Ｂｉ）、カドミウム（Ｃｄ）、亜鉛（Ｚｎ）、ガリウム（Ｇａ）、セレン（Ｓｅ）、アルミニウム（Ａｌ）、硫黄（Ｓ）、ベリリウム（Ｂｅ）、インジウム（Ｉｎ）、及び、鉛（Ｐｂ）から成る群から選ばれる少なくとも一つの元素の濃度が第１の領域及び第２の領域よりも高い第３の領域と、を含む抵抗変化層と、を備える。【選択図】図３