POLYIMIDE SOLUTION FOR FORMING POROUS POLYIMIDE FILM, PROCESS FOR PRODUCING POROUS POLYIMIDE FILM, AND POROUS POLYIMIDE FILM

PROBLEM TO BE SOLVED: To provide: a PI solution in which a porous PI film having high porosity, small average pore diameter, as well as excellent mechanical properties and heat resistance can be produced; a process for producing a porous PI film using said solution; and a porous PI film.SOLUTION: A...

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Bibliographic Details
Main Authors SHIBATA KENTA, ECHIGO YOSHIAKI, YAMADA MUNENORI, SHIGETA AKIRA
Format Patent
LanguageEnglish
Japanese
Published 11.01.2018
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Summary:PROBLEM TO BE SOLVED: To provide: a PI solution in which a porous PI film having high porosity, small average pore diameter, as well as excellent mechanical properties and heat resistance can be produced; a process for producing a porous PI film using said solution; and a porous PI film.SOLUTION: A PI solution for forming porous PI film is a PI solution containing a good solvent and poor solvent for a PI and in which, characterized, the PI is a PI comprising an alkylene component in the main chain. The process for producing a porous PI film comprises a step of coating said PI solution on the surface of a substrate, followed by drying at a temperature of 350°C or lower to form a porous PI film. The porous PI film is a porous PI film having a porosity of 20 vol% or more and 90 vol% or less and an average pore diameter of 10 nm or more and 2000 nm or less and in which, characterized, said PI is a PI comprising an alkylene component in the main chain. Said porous PI film in which an active layer is formed on the surface thereof.SELECTED DRAWING: None 【課題】高気孔率であり平均気孔径が小さく、かつ力学的特性や耐熱性に優れた多孔質PIフィルムが得られるPI溶液、この溶液を用いて多孔質PIフィルム製造方法を製造する方法および多孔質PIフィルムを提供する。【解決手段】<1> PIに対する良溶媒と貧溶媒とを含有するPI溶液であって、前記PIが、主鎖中にアルキレン成分を含むPIであることを特徴とする多孔質PIフィルム形成用PI溶液。<2> 前記PI溶液を、基材表面に塗布後、350℃以下の温度で乾燥することにより多孔質PI被膜を形成する工程を含む多孔質PIフィルムの製造方法。<3> 気孔率が20体積%以上、90体積%以下、平均気孔径が10nm以上、2000nm以下の多孔質PIフィルムであって、前記PIが、主鎖中にアルキレン成分を含むPIであることを特徴とする多孔質PIフィルム。<4> 表面に活性層が形成された前記多孔質PIフィルム。【選択図】なし
Bibliography:Application Number: JP20170122342