PROCESSING METHOD OF WAFER

• Main Authors: YOSHIKAWA TOSHIYUKI, TSUCHIYA TOSHIO
• Format: Patent
• Language: English; Japanese
• Published: 28.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

PROBLEM TO BE SOLVED: To divide a wafer having a functional film well.SOLUTION: A processing method of wafer for dividing a wafer (W1) having multiple dividing lines along the dividing lines has a step of cutting the wafer from the surface (71) to the middle in the thickness direction by means of a cutting blade, and forming multiple cut grooves (76), and a step of irradiating the wafer with a laser light beam of such a wavelength as having absorptivity for the wafer, from the surface side of the wafer toward the cut groove, and dividing the wafer into multiple devices along with a functional film (74) on the back (72) of the wafer.SELECTED DRAWING: Figure 5 【課題】機能膜を有するウェーハを良好に分割すること。【解決手段】複数の分割予定ラインを有するウェーハ（Ｗ１）を分割予定ラインに沿って分割するウェーハの加工方法であって、ウェーハの表面（７１）側から切削ブレードでウェーハの厚み方向途中まで切り込んで、分割予定ラインに沿って複数の切削溝（７６）を形成するステップと、ウェーハの表面側から切削溝内に向けて、ウェーハに対して吸収性を有する波長のレーザー光線を照射して、ウェーハの裏面（７２）の機能膜（７４）と共にウェーハを切削溝に沿って複数のデバイスに分割するステップとを有する構成にした。【選択図】図５