AVALANCHE PHOTODIODE AND MANUFACTURING METHOD OF THE SAME

• Main Authors: MAEDA YOSHIO, MURAMOTO YOSHIFUMI, NAKAJIMA FUMITO, SANJO HIROAKI, YOSHIMATSU TOSHIHIDE
• Format: Patent
• Language: English; Japanese
• Published: 28.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide an avalanche photodiode which suppresses a rise in element temperature so as to have improved optical input resistance even if a bonding area of a bonding portion is reduced for acceleration.SOLUTION: An avalanche photodiode is configured by an APD mesa in which a p-type contact layer, a light absorption layer, an avalanche layer, and an n-type contact layer are sequentially stacked on a first substrate made of InP. The avalanche photodiode comprises: a second substrate which is bonded, via a bonding layer, to a first surface of the first substrate where the APD mesa is formed; a bias electrode which is bonded to the n-type contact layer of the APD mesa by opening the second substrate and the bonding layer; and a signal electrode which is bonded to the p-type contact layer of the APD mesa through a via opened from the rear face of the first substrate.SELECTED DRAWING: Figure 2 【課題】高速化のために接合部の接合面積を小さくしても、素子温度の上昇を抑制し、光入力耐性を向上させたアバランシェフォトダイオードを提供する。【解決手段】ＩｎＰからなる第１の基板上にｐ型コンタクト層、光吸収層、アバランシェ層、およびｎ型コンタクト層が順に積層されたＡＰＤメサから構成されるアバランシェフォトダイオードであって、前記第１の基板上の前記ＡＰＤメサが形成された第１の面に、接着層を介して接合された第２の基板と、前記第２の基板および前記接着層を開口して、前記ＡＰＤメサのｎ型コンタクト層に接合されたバイアス電極と、前記第１の基板の裏面から開口したビアを介して前記ＡＰＤメサのｐ型コンタクト層に接合されたシグナル電極とを備えた。【選択図】図２