METAL-CERAMIC COMBINING SUBSTRATE AND MANUFACTURING METHOD THEREOF

• Main Authors: IDEGUCHI SATORU, YUKI MASAYA, SHIMAZU MASAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 28.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a metal-ceramic combining substrate and a manufacturing method of the same, capable of suppressing variation of wrapping of a base plate due to heating caused by soldering a semiconductor chip in the metal-ceramic combining substrate in which the base plate made from an aluminium or an aluminium alloy is directly combined to a ceramic substrate.SOLUTION: A metal-ceramic combining substrate comprises: a ceramic substrate 10 of which a plane surface form has a rectangle form; a base plate 12 which is made of a rectangle aluminium or an aluminium alloy, and of which the plane surface form directly connected to a peripheral edge part of one surface (surface of a circuit pattern side) of the ceramic substrate 10 and a whole surface of a side surface and the other surface (back surface) has a rectangle form; and a circuit pattern metal plate 14 which is made of the aluminium or the aluminium alloy directly connected to one surface of the ceramic substrate 10 so as to be separated from the base plate 12 directly connected to the peripheral edge part of one surface of the ceramic substrate 10.SELECTED DRAWING: Figure 1C 【課題】アルミニウムまたはアルミニウム合金からなるベース板がセラミックス基板に直接接合した金属−セラミックス接合基板において、半導体チップなどを半田付けする際などの加熱によるベース板の反りのばらつきを抑制することができる、金属−セラミックス接合基板およびその製造方法を提供する。【解決手段】金属−セラミックス接合基板は、平面形状が略矩形のセラミックス基板１０と、このセラミックス基板１０の一方の面（回路パターン側の面）の周縁部と側面および他方の面（裏面）の全面に直接接合した平面形状が略矩形のアルミニウムまたはアルミニウム合金からなるベース板１２と、セラミックス基板１０の一方の面の周縁部に直接接合したベース板１２から離間してセラミックス基板１０の一方の面に直接接合したアルミニウムまたはアルミニウム合金からなる回路パターン用金属板１４とを備えている。【選択図】図１Ｃ