FAN-OUT SEMICONDUCTOR PACKAGE

PROBLEM TO BE SOLVED: To provide a fan-out semiconductor package in which connection terminals may extend toward the outside of a region in which a semiconductor chip is disposed.SOLUTION: A fan-out semiconductor package includes: first and second interconnection members including redistribution lay...

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Bibliographic Details
Main Authors LEE DOO HWAN, BYUN DAE JUNG, KIM JUNG SOO
Format Patent
LanguageEnglish
Japanese
Published 14.12.2017
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Summary:PROBLEM TO BE SOLVED: To provide a fan-out semiconductor package in which connection terminals may extend toward the outside of a region in which a semiconductor chip is disposed.SOLUTION: A fan-out semiconductor package includes: first and second interconnection members including redistribution layers electrically connected to connection pads; a semiconductor chip disposed in a through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface disposed on the opposite side of the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface; a passivation layer 202 disposed on the second interconnection member and having openings 202H exposing at least portions of the redistribution layer 142b of the second interconnection member; and an under-bump metal layer 160 which comprises a conductor layer 303 with a first number of layers formed on a surface of the passivation layer 202 and conductor layers 161 and 162 with a second number of layers formed on the exposed redistribution layer and wall surfaces of the openings 202H and which fills at least portions of the openings 202H.SELECTED DRAWING: Figure 11 【課題】接続端子を半導体チップが配置されている領域外にも拡張可能なファンアウト半導体パッケージを提供する。【解決手段】ファンアウト半導体パッケージは、接続パッドと電気的に連結された再配線層を含む第1および第2連結部材と、第1連結部材の貫通孔に配置され、接続パッドが配置された活性面及び活性面の反対側に配置された非活性面を有する半導体チップと、第1連結部材及び上記非活性面の少なくとも一部を封止する封止材と、第2連結部材上に配置され、第2連結部材の再配線層142bの少なくとも一部を露出させる開口部202Hを有するパッシベーション層202と、パッシベーション層202の表面に形成された第1の層数の導体層303と、露出した再配線層及び開口部202Hの壁面上に形成された第2の層数の導体層161,162から成り、開口部202Hの少なくとも一部を満たすアンダーバンプ金属層160と、を含む。【選択図】図11
Bibliography:Application Number: JP20160240422