PHOTODETECTOR

• Main Authors: TAMAOKI NORIHIKO, SHIMAZAKI NAOKI, SHISHIDO SANSHIRO
• Format: Patent
• Language: English; Japanese
• Published: 07.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a photodetector having a novel configuration.SOLUTION: A photodetector includes a semiconductor layer having a source region and drain region, a gate insulation layer located on a region of the semiconductor layer between the source region and drain region and having a photoelectric conversion layer, a gate electrode located on the gate insulation layer, a signal detection circuit having a first signal detection transistor, the input of which is connected electrically with one of the source region or drain region, a first transfer transistor connected between one of the source region or drain region and the input of the first signal detection transistor, a first capacitor having one end connected electrically with the input of the first signal detection transistor, and a reset transistor where one of drain or source is connected between the first transfer transistor and first capacitor. The signal detection circuit detects an electric signal corresponding to quantity of light incident to the photoelectric conversion layer.SELECTED DRAWING: Figure 7 【課題】新規な構成を有する光検出装置を提供する。【解決手段】本開示のある実施形態による光検出装置は、ソース領域およびドレイン領域を含む半導体層と、半導体層のソース領域とドレイン領域とで挟まれた領域上に位置し、光電変換層を含むゲート絶縁層と、ゲート絶縁層上に位置するゲート電極と、ソース領域およびドレイン領域のうちの一方に入力が電気的に接続された第１信号検出トランジスタを含む信号検出回路と、ソース領域およびドレイン領域のうちの一方と第１信号検出トランジスタの入力との間に接続された第１転送トランジスタと、第１信号検出トランジスタの入力に一端が電気的に接続された第１キャパシタと、第１転送トランジスタと第１キャパシタとの間にドレインおよびソースの一方が接続されたリセットトランジスタと、を備え、信号検出回路は、光電変換層へ入射した光量に対応した電気信号を検出する。【選択図】図７