HEAT TREATMENT METHOD OF SILICON WAFER

• Main Authors: BANBA HIRONORI, OKAMURA HIDEYUKI, MAEDA SUSUMU, SUEOKA KOJI, NAKAMURA KOZO, ARAKI KOJI, SUDO HARUO
• Format: Patent
• Language: English; Japanese
• Published: 07.12.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a heat treatment method of silicon wafer capable of making compatible the integrity of a denuded zone (DZ layer), and high gettering ability in the bulk layer.SOLUTION: Heat treatment is performed in a range where the treatment temperature Tby a rapid temperature rise/fall heat treatment device is 1250°C-1350°C, and the temperature fall rate Rfrom the treatment temperature is 20°C/sec-150°C/sec, by adjusting the treatment temperature Tand temperature fall rate Rin the range of the upper limit P=0.00207TR-2.52R+13.3 (formula (A)), and the lower limit P=0.000548TR-0.605R-0.511 (formula (B)) of the oxygen partial pressure P in the heat treatment atmosphere gas.SELECTED DRAWING: None 【課題】デヌーデッドゾーン（ＤＺ層）の完全性と、バルク層における高いゲッタリング能を両立することができるシリコンウェーハの熱処理方法を提供する。【解決手段】急速昇降温熱処理装置による処理温度ＴＳが１２５０℃以上１３５０℃以下、かつ、前記処理温度からの降温速度Ｒｄが２０℃／秒以上１５０℃／秒以下の範囲内であって、熱処理雰囲気ガス中の酸素分圧Ｐの上限Ｐ＝０．００２０７ＴＳ・Ｒｄ−２．５２Ｒｄ＋１３．３（（Ａ）式）、Ｐの下限Ｐ＝０．０００５４８ＴＳ・Ｒｄ−０．６０５Ｒｄ−０．５１１（（Ｂ）式）の範囲内で処理温度ＴＳ、降温速度Ｒｄを調節して熱処理を行う。【選択図】なし