METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, AND PROGRAM

• Main Authors: TAKAZAWA HIROMASA, HATTA HIROKI, HARADA KATSUYOSHI, SHIMAMOTO SATOSHI
• Format: Patent
• Language: English; Japanese
• Published: 07.12.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To improve the film quality of an oxide film formed on a substrate.SOLUTION: A deposition step of supplying a material containing a predetermined element to a substrate whose temperature is controlled to a first temperature to form a film containing the predetermined element on the substrate, a temperature rising step of changing the temperature of the substrate to a second temperature higher than the first temperature under an atmosphere containing a first oxygen-containing gas, and an oxidation step of maintaining the temperature of the substrate to the second temperature under an atmosphere containing a second oxygen-containing gas to oxide the film, are performed in the same processing chamber. Thereby, the film quality of an oxide film formed on the substrate is improved.SELECTED DRAWING: Figure 5 【課題】基板上に形成する酸化膜の膜質を向上する。【解決手段】第１温度とした基板に対して所定元素を含む原料を供給し基板上に所定元素を含む膜を形成する成膜工程と、第１の酸素含有ガスを含む雰囲気下で基板の温度を第１温度よりも高い第２温度へ変更する昇温工程と、第２の酸素含有ガスを含む雰囲気下で基板の温度を第２温度に維持し膜を酸化させる酸化工程と、を同一の処理室内で行う。これにより、基板上に形成する酸化膜の膜質を向上する。【選択図】図５