METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and the semiconductor device capable of improving voltage resistance.SOLUTION: A method of manufacturing a semiconductor device 10 includes the following steps of: mounting a semiconductor element 2 on a substrate 1; b...

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Bibliographic Details
Main Author NAKAI MOTOO
Format Patent
LanguageEnglish
Japanese
Published 30.11.2017
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Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and the semiconductor device capable of improving voltage resistance.SOLUTION: A method of manufacturing a semiconductor device 10 includes the following steps of: mounting a semiconductor element 2 on a substrate 1; bonding a heat spreader container 3 having an opening onto an opposite side surface to the substrate 1, of the semiconductor element 2; forming resin 4 that covers a part of the container 3 and at least a part of the substrate 1 so as to expose the opening of the container 3; putting a heat storage material 5 into the container 3 from the opening after the resin 4 is formed; and covering the opening of the container 3 into which the heat storage material 5 is put, with a lid 6.SELECTED DRAWING: Figure 8 【課題】耐圧性を向上できる半導体装置の製造方法及び半導体装置を提供する。【解決手段】半導体装置10の製造方法は、基板1に半導体素子2を実装する工程と、開口を有するヒートスプレッダの容器3を、半導体素子2の基板1と反対側の面に接合する工程と、容器3の開口が露出するように、容器3の一部及び基板1の少なくとも一部を覆う樹脂4を形成する工程と、樹脂4が形成された後に、開口から容器3の中へ蓄熱材5を入れる工程と、蓄熱材5が入った容器3の開口を蓋6で塞ぐ工程と、を有する【選択図】図8
Bibliography:Application Number: JP20160105639