THIN FILM FORMING MATERIAL, AND THIN FILM MANUFACTURING METHOD

• Main Authors: YAMADA NAOKI, SATO HIROKI, SATO HARUYOSHI, SHIRATORI TSUBASA
• Format: Patent
• Language: English; Japanese
• Published: 30.11.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a thin film forming material that has high thermal stability and is capable of forming a high-quality thin film homogeneously in a groove with an aspect ratio of about 10 to 200.SOLUTION: A thin film forming material contains a chemical compound expressed by the following general formula (1). [Chemical Formula 1]. (In the Formula: Rexpresses a linear or branched alkyl radical with 2 to 4 carbon atoms; Rto Reach independently express a linear or branched alkyl radical with 1 to 4 carbon atoms; A expresses an alkanediyl group with 1 to 4 carbon atoms; M expresses titanium, zirconium or hafnium. In the case where M is zirconium, however, A expresses an alkanediyl group with 3 or 4 carbon atoms).SELECTED DRAWING: None 【課題】熱安定性が高く、アスペクト比が１０〜２００程度の溝に均一に高品質な薄膜を形成することができる薄膜形成用原料を提供すること。【解決手段】下記一般式（１）で表される化合物を含有してなる薄膜形成用原料。【化１】（式中、Ｒ１は炭素原子数２〜４の直鎖又は分岐状のアルキル基を表し、Ｒ２〜Ｒ５は各々独立に炭素原子数１〜４の直鎖又は分岐状のアルキル基を表し、Ａは炭素原子数１〜４のアルカンジイル基を表し、Ｍはチタン、ジルコニウム又はハフニウムを表す。ただし、Ｍがジルコニウムの場合は、Ａは炭素原子数３又は４のアルカンジイル基である。）【選択図】なし