SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP
PROBLEM TO BE SOLVED: To disclose a semiconductor chip.SOLUTION: A semiconductor chip 100 comprises a first semiconductor layer 1. The first semiconductor layer 1 serves as a waveguide layer and/or an active layer, and has regions 11, 12 differing from each other in material composition and disposed...
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24.11.2017
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Abstract | PROBLEM TO BE SOLVED: To disclose a semiconductor chip.SOLUTION: A semiconductor chip 100 comprises a first semiconductor layer 1. The first semiconductor layer 1 serves as a waveguide layer and/or an active layer, and has regions 11, 12 differing from each other in material composition and disposed adjacent to each other in a lateral direction. The region 11 is higher, in indium content, than the regions 12 adjacent thereto in the lateral direction and as such, the regions 12 are lower, in refraction index, than the region 11, and the regions 12 are larger, in bandgap, than the region 11. Therefore, the region 11 forming a laser stripe portion makes a region of a wavelength properly longer than that of the regions 12 located on both sides thereof because of being smaller than the regions 12 on both the sides in bandgap. With the aid of the difference in refraction index and the difference in bandgap, the refraction index wave guide of light generated in the laser stripe portion of the active layer is achieved in the semiconductor chip in action.SELECTED DRAWING: Figure 2A
【課題】半導体チップを開示する。【解決手段】第1の半導体層1を備えた半導体チップ100であって、第1の半導体層1は、導波路層および/または活性層であって、横方向に隣り合って配置され、かつ材料組成の異なる領域11,12を備え、領域11のインジウム含有率は、横方向に隣り合った領域12より高いので、領域12の屈折率は領域11より低く、かつ領域12のバンドギャップは領域11より大きく、したがって、レーザストライプ部を成す領域11は、両隣の領域12よりバンドギャップが小さいことにより、両隣の領域12より相応に長い波長の領域となり、このような屈折率およびバンドギャップの相違により、半導体チップの動作中には、活性層のレーザストライプ部において生成された光の屈折率導波を達成する。【選択図】図2A |
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AbstractList | PROBLEM TO BE SOLVED: To disclose a semiconductor chip.SOLUTION: A semiconductor chip 100 comprises a first semiconductor layer 1. The first semiconductor layer 1 serves as a waveguide layer and/or an active layer, and has regions 11, 12 differing from each other in material composition and disposed adjacent to each other in a lateral direction. The region 11 is higher, in indium content, than the regions 12 adjacent thereto in the lateral direction and as such, the regions 12 are lower, in refraction index, than the region 11, and the regions 12 are larger, in bandgap, than the region 11. Therefore, the region 11 forming a laser stripe portion makes a region of a wavelength properly longer than that of the regions 12 located on both sides thereof because of being smaller than the regions 12 on both the sides in bandgap. With the aid of the difference in refraction index and the difference in bandgap, the refraction index wave guide of light generated in the laser stripe portion of the active layer is achieved in the semiconductor chip in action.SELECTED DRAWING: Figure 2A
【課題】半導体チップを開示する。【解決手段】第1の半導体層1を備えた半導体チップ100であって、第1の半導体層1は、導波路層および/または活性層であって、横方向に隣り合って配置され、かつ材料組成の異なる領域11,12を備え、領域11のインジウム含有率は、横方向に隣り合った領域12より高いので、領域12の屈折率は領域11より低く、かつ領域12のバンドギャップは領域11より大きく、したがって、レーザストライプ部を成す領域11は、両隣の領域12よりバンドギャップが小さいことにより、両隣の領域12より相応に長い波長の領域となり、このような屈折率およびバンドギャップの相違により、半導体チップの動作中には、活性層のレーザストライプ部において生成された光の屈折率導波を達成する。【選択図】図2A |
Author | LELL ALFRED ANDRE SOMERS EICHLER CHRISTOPH BERNHARD STOJETZ ANDREAS LOEFFLER |
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DocumentTitleAlternate | 半導体チップ、および半導体チップの製造方法 |
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Snippet | PROBLEM TO BE SOLVED: To disclose a semiconductor chip.SOLUTION: A semiconductor chip 100 comprises a first semiconductor layer 1. The first semiconductor... |
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SubjectTerms | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
Title | SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP |
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