SEMICONDUCTOR CHIP, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP

• Main Authors: ANDREAS LOEFFLER, EICHLER CHRISTOPH, BERNHARD STOJETZ, ANDRE SOMERS, LELL ALFRED
• Format: Patent
• Language: English; Japanese
• Published: 24.11.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To disclose a semiconductor chip.SOLUTION: A semiconductor chip 100 comprises a first semiconductor layer 1. The first semiconductor layer 1 serves as a waveguide layer and/or an active layer, and has regions 11, 12 differing from each other in material composition and disposed adjacent to each other in a lateral direction. The region 11 is higher, in indium content, than the regions 12 adjacent thereto in the lateral direction and as such, the regions 12 are lower, in refraction index, than the region 11, and the regions 12 are larger, in bandgap, than the region 11. Therefore, the region 11 forming a laser stripe portion makes a region of a wavelength properly longer than that of the regions 12 located on both sides thereof because of being smaller than the regions 12 on both the sides in bandgap. With the aid of the difference in refraction index and the difference in bandgap, the refraction index wave guide of light generated in the laser stripe portion of the active layer is achieved in the semiconductor chip in action.SELECTED DRAWING: Figure 2A 【課題】半導体チップを開示する。【解決手段】第１の半導体層１を備えた半導体チップ１００であって、第１の半導体層１は、導波路層および／または活性層であって、横方向に隣り合って配置され、かつ材料組成の異なる領域１１，１２を備え、領域１１のインジウム含有率は、横方向に隣り合った領域１２より高いので、領域１２の屈折率は領域１１より低く、かつ領域１２のバンドギャップは領域１１より大きく、したがって、レーザストライプ部を成す領域１１は、両隣の領域１２よりバンドギャップが小さいことにより、両隣の領域１２より相応に長い波長の領域となり、このような屈折率およびバンドギャップの相違により、半導体チップの動作中には、活性層のレーザストライプ部において生成された光の屈折率導波を達成する。【選択図】図２Ａ