METHOD FOR MANUFACTURING SILICON WAFER

• Main Authors: KUDO TOMOJI, MURANAKA TOSHIYUKI, MATSUDA SHUHEI, NAKAMURA KOZO, HIRAKI KEIICHIRO, KIN DAIKI
• Format: Patent
• Language: English; Japanese
• Published: 09.11.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon wafer, capable of preventing or suppressing an uneven distribution LPD (Light Point Defect) from occurring.SOLUTION: The method for manufacturing a silicon wafer comprises cutting out a wafer from a silicon single crystal ingot or a block cut from the ingot within 50 days after completing the crystal growth of the ingot when the ingot or the block has a boron concentration of 5×10atoms/cmor more and 7×10atoms/cmor less and an oxygen donor concentration of 4×10/cmor more and or 8×10/cmor less.SELECTED DRAWING: Figure 4 【課題】偏在ＬＰＤの発生を防止、または抑制できる、シリコンウェーハの製造方法を提供する。【解決手段】このシリコンウェーハの製造方法では、シリコン単結晶のインゴット、または当該インゴットから切り出したブロックについて、ホウ素濃度が、５×１０１４ａｔｏｍｓ／ｃｍ３以上、かつ７×１０１４ａｔｏｍｓ／ｃｍ３以下であり、かつ、酸素ドナー濃度が、４×１０１４個／ｃｍ３以上、かつ８×１０１４個／ｃｍ３以下である場合に、前記インゴットの結晶育成完了後５０日以内に、前記インゴットまたはブロックからウェーハを切り出す。【選択図】図４