ELECTRONIC PACKAGE CONTAINING CAVITY FORMED BY REMOVAL OF SACRIFICE MATERIAL FROM CAP

PROBLEM TO BE SOLVED: To reduce an amount of an etchant remaining in a cavity for an MEMS device because of a wet etching step for removal of a sacrifice layer, and to secure a structural strength of a film defining the cavity even when a through hole is provided on the film.SOLUTION: A method for m...

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Bibliographic Details
Main Authors KAMEYAMA ICHIRO, KAMIBAYASHI TETSUYA, FURUKAWA MITSUHIRO, TAKANO ATSUSHI
Format Patent
LanguageEnglish
Japanese
Published 02.11.2017
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Summary:PROBLEM TO BE SOLVED: To reduce an amount of an etchant remaining in a cavity for an MEMS device because of a wet etching step for removal of a sacrifice layer, and to secure a structural strength of a film defining the cavity even when a through hole is provided on the film.SOLUTION: A method for manufacturing an electronic component 10 includes: forming a functional portion 13 on a main surface of a substrate 11; forming a sacrifice layer covering the functional portion on the main surface; forming a cap layer 14 covering the sacrifice layer; forming holes 14a, 14b passing through the cap layer; removing the sacrifice layer using a wet etching process passing through the hole to form a cavity 100; and forming a first resin layer 31 covering the cap layer and the main surface, where the cap layer forms a peripheral edge portion surrounding the cavity on the main surface, and the hole contains a peripheral edge hole 14b connecting the inside and outside of the cavity along the main surface.SELECTED DRAWING: Figure 1 【課題】犠牲層除去のためのウェットエッチング工程ゆえにMEMS装置のための空洞内に残留するエッチング液の量を減らすとともに、空洞を画定する膜の構造強度を、膜に貫通孔が設けられている場合であっても確保する。【解決手段】電子部品10を作製する方法であって、基板11の主表面に機能部13を形成することと、主表面において機能部を覆う犠牲層を形成することと、犠牲層を覆うキャップ層14を形成することと、キャップ層を通る孔14a,14bを形成することと、孔を通じたウェットエッチング工程を用いて犠牲層を除去することにより空洞100を形成することと、キャップ層及び主表面を覆う第1樹脂層31を形成することとを含み、キャップ層は主表面において空洞を囲む周縁部を形成し、孔は、主表面に沿って空洞の内部と空洞の外部とを連通する周縁孔14bを含む。【選択図】図1
Bibliography:Application Number: JP20170064299