SEMICONDUCTOR DEVICE

• Main Authors: NAKAMURA HIROKI, MASUOKA FUJIO
• Format: Patent
• Language: English; Japanese
• Published: 19.10.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device having a structure to form a super lattice or a quantum well structure in a columnar semiconductor layer depending on a difference in work functions of a metal and a semiconductor; or provide a semiconductor device capable of a high-speed operation.SOLUTION: A semiconductor device includes: a planar semiconductor layer 101 formed on a substrate 100; a columnar semiconductor layer 102 formed on the planar semiconductor layer 101; a first insulator 103 which surrounds the columnar semiconductor layer 102; a first gate 104 which surrounds the first insulator 103 and is composed of a metal having a first work function; a second gate 105 which surrounds the first insulator 103 and is composed of a metal having a second work function different from the first work function; a third gate 106 which surrounds the first insulator 103 and is composed of a metal having the first work function; a first metal layer 110 which surrounds the first insulator 103 and has a third work function; and a second metal layer 109 which surrounds the first insulator 103 and has the third work function.SELECTED DRAWING: Figure 1 【課題】金属と半導体との仕事関数差によって柱状半導体層に超格子もしくは量子井戸構造を形成する構造を有する半導体装置もしくは高速動作が可能な半導体装置を提供する。【解決手段】半導体装置は、基板１００上に形成された平面状半導体層１０１と、平面状半導体層１０１上に形成された柱状半導体層１０２と、前記柱状半導体層１０２を囲む第１の絶縁物１０３と、前記第１の絶縁物１０３を取り囲む第１の仕事関数を有する金属からなる第１のゲート１０４と、前記第１の絶縁物１０３を取り囲む前記第１の仕事関数と異なる第２の仕事関数を有する金属からなる第２のゲート１０５と、前記第１の絶縁物１０３を取り囲む第１の仕事関数を有する金属からなる第３のゲート１０６と、前記第１の絶縁物１０３を取り囲む第３の仕事関数を有する第１の金属層１１０と、前記第１の絶縁物１０３を取り囲む第３の仕事関数を有する第２の金属層１０９と、を有する。【選択図】図１