SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
PROBLEM TO BE SOLVED: To reduce the semiconductor device manufacturing step of forming a silicon integrated circuit and an optical waveguide on the same silicon substrate.SOLUTION: An optical waveguide OL for light signals is formed in a semiconductor layer SL on an SOI substrate 10; a heater HT for...
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Language | English Japanese |
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05.10.2017
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Abstract | PROBLEM TO BE SOLVED: To reduce the semiconductor device manufacturing step of forming a silicon integrated circuit and an optical waveguide on the same silicon substrate.SOLUTION: An optical waveguide OL for light signals is formed in a semiconductor layer SL on an SOI substrate 10; a heater HT for heating the optical waveguide OL is formed on an oxidation silicone film 11 covering the optical waveguide OL; and wirings M1A and M1B for supplying power are connected to the heater HT at both ends of heater HT. The wirings M1A and M1B are constituted of a laminated film of a bottom barrier metal film 12, an aluminum-copper alloy film 13 served as a main conductive film and a top barrier metal film 14; and the heater HT is integrally constituted with the bottom barrier metal film 12 constituting a part of each of the wirings M1A and M1B.SELECTED DRAWING: Figure 1
【課題】シリコン集積回路と光導波路とを同一シリコン基板に形成する半導体装置の製造工程を短縮する。【解決手段】SOI基板10の半導体層SLには、光信号用の光導波路OLが形成されており、光導波路OLを覆う酸化シリコン膜11の上部には、光導波路OLを加熱するためのヒータHTが形成され、ヒータHTの両端には、ヒータHTに電源を供給するための配線M1A、M1Bが接続されている。配線M1A、M1Bのそれぞれは、ボトムバリアメタル膜12と、主導電膜であるアルミニウム−銅合金膜13と、トップバリアメタル膜14との積層膜で構成されており、ヒータHTは、配線M1A、M1Bのそれぞれの一部を構成するボトムバリアメタル膜12と一体に構成されている。【選択図】図1 |
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AbstractList | PROBLEM TO BE SOLVED: To reduce the semiconductor device manufacturing step of forming a silicon integrated circuit and an optical waveguide on the same silicon substrate.SOLUTION: An optical waveguide OL for light signals is formed in a semiconductor layer SL on an SOI substrate 10; a heater HT for heating the optical waveguide OL is formed on an oxidation silicone film 11 covering the optical waveguide OL; and wirings M1A and M1B for supplying power are connected to the heater HT at both ends of heater HT. The wirings M1A and M1B are constituted of a laminated film of a bottom barrier metal film 12, an aluminum-copper alloy film 13 served as a main conductive film and a top barrier metal film 14; and the heater HT is integrally constituted with the bottom barrier metal film 12 constituting a part of each of the wirings M1A and M1B.SELECTED DRAWING: Figure 1
【課題】シリコン集積回路と光導波路とを同一シリコン基板に形成する半導体装置の製造工程を短縮する。【解決手段】SOI基板10の半導体層SLには、光信号用の光導波路OLが形成されており、光導波路OLを覆う酸化シリコン膜11の上部には、光導波路OLを加熱するためのヒータHTが形成され、ヒータHTの両端には、ヒータHTに電源を供給するための配線M1A、M1Bが接続されている。配線M1A、M1Bのそれぞれは、ボトムバリアメタル膜12と、主導電膜であるアルミニウム−銅合金膜13と、トップバリアメタル膜14との積層膜で構成されており、ヒータHTは、配線M1A、M1Bのそれぞれの一部を構成するボトムバリアメタル膜12と一体に構成されている。【選択図】図1 |
Author | USAMI TATSUYA |
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Discipline | Medicine Chemistry Sciences Physics |
DocumentTitleAlternate | 半導体装置およびその製造方法 |
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Snippet | PROBLEM TO BE SOLVED: To reduce the semiconductor device manufacturing step of forming a silicon integrated circuit and an optical waveguide on the same... |
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SubjectTerms | DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
Title | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
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